The Vermont Gallium Nitride (V-GaN) Tech Hub — a consortium led by the University of Vermont (UVM) and including ...

Fraunhofer ISE and partners have developed a SiC-based medium voltage system technology for fast charging stations that will ...

Onsemi has completed its acquisition of Qorvo's SiC JFET technology business, including the United SiC subsidiary, for $115 ...

Electrical measurements on these diodes revealed that increasing their temperature from ambient to 573K produces a fall in ...

Infineon is expanding its portfolio with the MOTIX Bridge BTM90xx family, a product family of full-bridge/ H-bridge ICs ...

Efficient Power Conversion Corporation (EPC) has introduced the GaN-based EPC91200, a fully configured motor drive inverter ...

Renesas Electronics has introduced new 100V high-power N-Channel MOSFETs that are said to deliver industry-leading ...

Mitsubishi Electric will shortly be sampling its new LV100-type 1.2-kV IGBT module for solar and other renewable-energy power ...

Researchers at Osaka University have demonstrated that low-temperature post-deposition annealing slashes the density of hole ...

The proposed SiC fab will launch with a production capacity of 10,000 wafers per month, rising to 50,000 wafers per month ...

1.7kV modules designed for inverter systems of railways, electric power systems and more Mitsubishi Electric will begin shipping samples of two new S1-Series High Voltage IGBT modules, both rated at 1 ...