The HALO 201 MBE is a gas analysis system for molecular beam epitaxy applications. Hiden’s HALO systems are intended for RGA, gas analysis and process monitoring applications such as leak detection, ...

Written by renowned experts, this valuable resource covers the most important topics and achievements in recent years, discusses progress made by different groups, and suggests future directions.

When In and As atoms are injected onto the GaAs substrate under the high-vacuum environment of the molecular beam epitaxy (MBE) reactor, a two-dimensional thin layer grows at first, and then ...

(Image: University of Marburg, Molecular Solids Group) While Organic Molecular Beam Deposition (OMBD) and Molecular Beam Epitaxy (MBE) are both advanced techniques for creating thin films, they cater ...

Two Multidisciplinary University Research Initiatives have been awarded to the University of Michigan in Ann Arbor, which is expected to advance game theory and develop a new material for use in ...

announced today a record high arsenic dopant activation for crystalline CdTe produced by molecular beam epitaxy (MBE). This work was funded by the U.S. Department of Energy (DOE) as part of the ...

From a semiconductor device perspective, UltraRAM is a compound device featuring GaSb, InAs, and AlSb layers deposited on top of each other using the molecular beam epitaxy (MBE) method ...

Scientists at MIT improved electron mobility, which measures how quickly electricity travels through a material, by creating ...

Ohio State University has chosen advanced reactor platforms from Japanese industrial gas company Taiyo Nippon Sanso ...

Researchers have created a cutting-edge structure by placing a very thin layer of a special insulating material between two magnetic layers. This new combination acts as a quantum anomalous Hall ...

The preparation of these nanowires relies on sophisticated growth techniques, which include self-assembly processes, where atoms arrange themselves naturally on stepped surfaces, chemical vapor ...